1 motorola bipolar power transistor device data dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version available in 16 mm tape and reel (at4o suffix) ? surface mount replacements for 2n60402n6045 series, tip120tip122 series, and tip125tip127 series ? monolithic construction with builtin baseemitter shunt resistors ? high dc current gain e h fe = 2500 (typ) @ i c = 4.0 adc ? complementary pairs simplifies designs ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? maximum ratings ????????????? ????????????? ????????????? ????????????? rating ???? ???? ???? ???? symbol ?????? ?????? ?????? ?????? mjd122 mjd127 ??? ??? ??? ??? unit ????????????? ????????????? ????????????? ????????????? collectoremitter voltage ???? ???? ???? ???? v ceo ?????? ?????? ?????? ?????? 100 ??? ??? ??? ??? vdc ????????????? ????????????? ????????????? ????????????? collectorbase voltage ???? ???? ???? ???? v cb ?????? ?????? ?????? ?????? 100 ??? ??? ??? ??? vdc ????????????? ????????????? ????????????? ????????????? emitterbase voltage ???? ???? ???? ???? v eb ?????? ?????? ?????? ?????? 5 ??? ??? ??? ??? vdc ????????????? ????????????? ????????????? ????????????? ????????????? collector current e continuous peak ???? ???? ???? ???? ???? i c ?????? ?????? ?????? ?????? ?????? 8 16 ??? ??? ??? ??? ??? adc ????????????? ????????????? ????????????? ????????????? base current ???? ???? ???? ???? i b ?????? ?????? ?????? ?????? 120 ??? ??? ??? ??? madc ????????????? ????????????? ????????????? ????????????? ????????????? total power dissipation @ t c = 25 c derate above 25 c ???? ???? ???? ???? ???? p d ?????? ?????? ?????? ?????? ?????? 20 0.16 ??? ??? ??? ??? ??? watts w/ c ????????????? ????????????? ????????????? ????????????? total power dissipation* @ t a = 25 c derate above 25 c ???? ???? ???? ???? p d ?????? ?????? ?????? ?????? 1.75 0.014 ??? ??? ??? ??? watts w/ c ????????????? ????????????? ????????????? ????????????? ????????????? operating and storage junction temperature range ???? ???? ???? ???? ???? t j , t stg ?????? ?????? ?????? ?????? ?????? 65 to + 150 ??? ??? ??? ??? ??? c ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? thermal characteristics ????????????? ????????????? ????????????? ????????????? characteristic ???? ???? ???? ???? symbol ?????? ?????? ?????? ?????? max ??? ??? ??? ??? unit ????????????? ????????????? ????????????? ????????????? thermal resistance, junction to case ???? ???? ???? ???? r q jc ?????? ?????? ?????? ?????? 6.25 ??? ??? ??? ??? c/w ????????????? ????????????? ????????????? ????????????? thermal resistance, junction to ambient* ???? ???? ???? ???? r q ja ?????? ?????? ?????? ?????? 71.4 ??? ??? ??? ??? c/w ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ????????????? ????????????? ????????????? ????????????? characteristic ???? ???? ???? ???? symbol ???? ???? ???? ???? min ??? ??? ??? ??? max ??? ??? ??? ??? unit ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? off characteristics ????????????? ????????????? ????????????? ????????????? collectoremitter sustaining voltage (i c = 30 madc, i b = 0) ???? ???? ???? ???? v ceo(sus) ???? ???? ???? ???? 100 ??? ??? ??? ??? e ??? ??? ??? ??? vdc ????????????? ????????????? ????????????? ????????????? ????????????? collector cutoff current (v ce = 50 vdc, i b = 0) ???? ???? ???? ???? ???? i ceo ???? ???? ???? ???? ???? e ??? ??? ??? ??? ??? 10 ??? ??? ??? ??? ??? m adc * these ratings are applicable when surface mounted on the minimum pad sizes recommended. (continued) preferred devices are motorola recommended choices for future use and best overall value.
semiconductor technical data order this document by mjd122/d ? motorola, inc. 1995 case 369a13 silicon power transistors 8 amperes 100 volts 20 watts *motorola preferred device case 36907 minimum pad sizes recommended for surface mounted applications 0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8 0.165 4.191 0.190 4.826 inches mm rev 1
2 motorola bipolar power transistor device data ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? electrical characteristics e continued (t c = 25 c unless otherwise noted) ?????????????????? ?????????????????? ?????????????????? ?????????????????? characteristic ????? ????? ????? ????? symbol ????? ????? ????? ????? min ???? ???? ???? ???? max ???? ???? ???? ???? unit ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? off characteristics e continued ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? collector cutoff current (v ce = 100 vdc, v be(off) = 1.5 vdc) (v ce = 100 vdc, v be(off) = 1.5 vdc, t c = 125 c) ????? ????? ????? ????? ????? ????? i cex ????? ????? ????? ????? ????? ????? e e ???? ???? ???? ???? ???? ???? 10 500 ???? ???? ???? ???? ???? ???? m adc ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) ????? ????? ????? ????? ????? i cbo ????? ????? ????? ????? ????? e ???? ???? ???? ???? ???? 10 ???? ???? ???? ???? ???? m adc ?????????????????? ?????????????????? ?????????????????? ?????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ????? ????? ????? ????? i ebo ????? ????? ????? ????? e ???? ???? ???? ???? 2 ???? ???? ???? ???? madc ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? on characteristics ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? dc current gain (i c = 4 adc, v ce = 4 vdc) (i c = 8 adc, v ce = 4 vdc) ????? ????? ????? ????? ????? ????? h fe ????? ????? ????? ????? ????? ????? 1000 100 ???? ???? ???? ???? ???? ???? 12,000 e ???? ???? ???? ???? ???? ???? e ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? collectoremitter saturation voltage (i c = 4 adc, i b = 16 madc) (i c = 8 adc, i b = 80 madc) ????? ????? ????? ????? ????? v ce(sat) ????? ????? ????? ????? ????? e e ???? ???? ???? ???? ???? 2 4 ???? ???? ???? ???? ???? vdc ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? baseemitter saturation voltage (1) (i c = 8 adc, i b = 80 madc) ????? ????? ????? ????? ????? v be(sat) ????? ????? ????? ????? ????? e ???? ???? ???? ???? ???? 4.5 ???? ???? ???? ???? ???? vdc ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? baseemitter on voltage (i c = 4 adc, v ce = 4 vdc) ????? ????? ????? ????? ????? v be(on) ????? ????? ????? ????? ????? e ???? ???? ???? ???? ???? 2.8 ???? ???? ???? ???? ???? vdc ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? ???????????????????????????????? dynamic characteristics ?????????????????? ?????????????????? ?????????????????? ?????????????????? currentgainbandwidth product (i c = 3 adc, v ce = 4 vdc, f = 1 mhz) ????? ????? ????? ????? |h fe | ????? ????? ????? ????? 4 ???? ???? ???? ???? e ???? ???? ???? ???? mhz ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjd127 mjd122 ????? ????? ????? ????? ????? ????? c ob ????? ????? ????? ????? ????? ????? e e ???? ???? ???? ???? ???? ???? 300 200 ???? ???? ???? ???? ???? ???? pf ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? smallsignal current gain (i c = 3 adc, v ce = 4 vdc, f = 1 khz) ????? ????? ????? ????? ????? h fe ????? ????? ????? ????? ????? 300 ???? ???? ???? ???? ???? e ???? ???? ???? ???? ???? e (1) pulse test: pulse width 300 m s, duty cycle 2%. figure 1. power derating 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissip ation (w atts) 2.5 0 2 1.5 1 0.5 t a t c t a surface mount t c
3 motorola bipolar power transistor device data v ce , collect oremitter vol tage (vol ts) v ce , collect oremitter vol tage (vol ts) i c , collector current (amp) 500 0.2 5000 2000 10,000 h fe , dc current gain 0.1 0.7 3000 0.5 1 20,000 1000 2 3 5 3 i b , base current (ma) 2.6 2.2 1.8 1.4 0.3 0.5 1 7 3 5 2 1 i c , collector current (amp) 2 1.5 v, vol tage (vol ts) 3 2.5 1 0.5 0.2 3 0.1 0.7 0.3 1 5 10 20 30 200 300 0.3 7 10 0.7 0.5 7 2 10 pnp mjd127 npn mjd122 i c , collector current (amp) 500 0.2 5000 2000 10,000 h fe , dc current gain v ce = 4 v t j = 150 c 7000 0.1 0.7 25 c 55 c 3000 0.5 1 20,000 700 1000 2 3 5 3 i b , base current (ma) 2.6 2.2 1.8 1.4 0.3 0.5 1 7 3 5 4 a i c = 2 a 2 t j = 25 c 1 i c , collector current (amp) 2 1.5 v, vol tage (vol ts) 3 2.5 1 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v v ce(sat) @ i c /i b = 250 0.2 3 0.1 0.7 0.3 1 5 10 20 30 figure 2. dc current gain figure 3. collector saturation region figure 4. aono voltages 200 300 0.3 7 10 0.7 0.5 7 2 10 6 a v ce = 4 v t j = 150 c 25 c 55 c t j = 25 c 4 a i c = 2 a 6 a t j = 25 c v be @ v ce = 4 v v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 typical electrical characteristics
4 motorola bipolar power transistor device data v , temperature coefficients (mv/ c) q i c , collector current (amp) 0.2 *i c /i b h fe/3 0.1 55 c to 25 c 1 2 3 10 10 4 v be , baseemitter voltage (volts) 10 1 0 + 0.4 , collect or current ( a) m i c 10 3 10 2 10 1 10 0 0.2 0.4 0.6 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 + 0.6 + 0.2 0.8 1 1.2 1.4 10 4 v be , baseemitter voltage (volts) 10 1 , collect or current ( a) m i c 10 3 10 2 10 1 10 0 10 5 + 5 5 q vb for v be 25 c to 150 c q vc for v ce(sat) figure 5. temperature coefficients v r , reverse voltage (volts) c ib 30 1 5 20 100 t j = 25 c 300 50 70 100 0.1 2 10 50 pnp npn 0.5 0.2 figure 6. collector cutoff region figure 7. smallsignal current gain 1 f, frequency (khz) 100 2 10 500 5000 t c = 25 c v ce = 4 vdc i c = 3 adc 3000 5 50 20 100 10,000 200 300 200 500 1000 pnp mjd127 npn mjd122 4 3 2 1 0 + 4 + 3 + 2 + 1 0.5 0.3 7 5 i c , collector current (amp) 0.2 0.1 1 2 3 0.5 0.3 7 5 2000 1000 10 50 20 30 pnp npn 200 figure 8. capacitance v , temperature coefficients (mv/ c) q + 5 5 4 3 2 1 0 + 4 + 3 + 2 + 1 0.7 10 0 0.4 + 0.2 + 0.4 + 0.6 0.6 0.2 + 0.8 + 1 + 1.2 + 1.4 h fe , smallsignal current gain c, cap acitance (pf) 55 c to 25 c 25 c to 150 c *i c /i b h fe/3 25 c to 150 c 55 c to 25 c 25 c to 150 c 55 c to 25 c * q vc for v ce(sat) q vb for v be reverse forward v ce = 30 v t j = 150 c 100 c 25 c c ob typical electrical characteristics
5 motorola bipolar power transistor device data t, time or pulse width (ms) 1 0.01 1000 0.3 0.2 0.07 r(t), effective transient r q jc(t) = r(t) r q jc r q jc = 6.25 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 thermal resist ance (normalized) 0.7 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 single pulse d = 0.5 0.05 0.1 0.5 3 0.3 0.2 0.7 1 5 i c , collector current (amp) v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c t, time ( s) m 3 2 0.7 0.5 0.3 0.2 t s t f t r t d @ v be(off) = 0 v pnp npn figure 9. switching times test circuit figure 10. switching times 0.1 1 10 7 5 2 figure 11. thermal response v 2 approx + 8 v 0 8 k scope v cc 30 v r c 51 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. 25 m s t r , t f 10 ns duty cycle = 1% + 4 v r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v 1 approx 12 v tut r b d 1 120 0.07 0.05 0.1 0.01 i c , collect or current (amp) 5 v ce , collectoremitter voltage (volts) 0.3 100 5 2 0.5 0.2 bonding wire limit thermal limit t c = 25 c (single pulse) second breakdown limit 10 50 7 t j = 150 c 100 m s 1 ms dc 0.1 1 3 15 20 30 20 70 curves apply below rated v ceo 5 ms figure 12. maximum forward bias safe operating rea 3 2 1 10 0.05 0.02 0.03 500 m s there are two limitations on the power handling ability of a transistor: average junction temperature and second break - down. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa - tion than the curves indicate. the data of figure 12 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits a r e v ali d f o r d ut y c ycle s t o 1 0 % p rovide d t j(pk) < 150 c. t j(pk) may be calculated from the data in fig - ure 11. at high case temperatures, thermal limitations will re - duce the power that can be handled to values less than the limitations imposed by second breakdown.
6 motorola bipolar power transistor device data figure 13. darlington schematic base emitter collector 8 k 120 pnp base emitter collector 8 k 120 npn
7 motorola bipolar power transistor device data package dimensions case 369a13 issue w style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 1 2 3 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27 case 36907 issue k style 1: pin 1. base 2. collector 3. emitter 4. collector d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 0.51 v 0.030 0.050 0.77 1.27 z 0.138 3.51 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 1 2 3 4
8 motorola bipolar power transistor device data how to reach us: usa / europe : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, toshikatsu otsuki, p.o. box 20912; phoenix, arizona 85036. 18004412447 6f seibubutsuryucenter, 3142 tatsumi kotoku, tokyo 135, japan. 0335218315 mfax : rmf ax0@email.sps.mot.com t ouchtone (602) 2446609 hong kong : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok road, tai po, n.t., hong kong. 85226629298 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation consequential or incidental damages. at ypicalo parameters can and do vary in dif ferent applications. all operating parameters, including at ypicalso must be validated for each customer application by customer ' s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur . should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/af firmative action employer . mjd122/d ?
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